0.625 W（Tamb=25℃）
Collector current
ICM : 1 A
Collector-base voltage
V(BR)CBO : 40 V
Operating and storage junction temperature range
TJ，Tstg: -55℃ to 150℃
ELE*RICAL CHARA*ERISTICS（Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 100μA ， IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO* IC= 0.1mA , IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE= 100μA， IC=0 6 V
Collector cut-off current ICBO VCB= 35V , IE=0 0.1 μA
Collector cut-off current ICEO VCE= 20V , IB=0 0.1 μA
hFE(1) VCE=1V, IC=5mA 45
DC current gain hFE(2) VCE=1V, IC=100mA 80 300
hFE（3） VCE=1V, IC=800mA 40
Collector-emitter saturation voltage VCE(sat) IC= 800mA, IB=80mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA 1.2 V
Transition frequency f T VCE=6V, IC= 20mA , f=30MHz 150 MHz

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