FAIRCHILD/*童
FQP70N10
结型(JFET)
N沟道
耗尽型
MOS-INM/*组件
CER-DIP/陶瓷直插
P-FET硅P沟道
22(V)
22(V)
22(μS)
22(pF)
类型:经销商
电话:
联系人:陈义伟
地址:广东深圳中国 广东 深圳市福田区 华强三店3A132(佳和大厦)
∟ 结型场效应管(267)
FSC*童MOS场效应系列芯片 FQP70N10
FSC*童MOS场效应系列芯片 FQP70N10
FQP70N10产品规格 参数
Datasheets FQP70N10
Product Photos TO-220-3 Pkg
Product Training Modules High Voltage Switches for Power Processing
Catalog Drawings MOSFET TO-220 Pkg
Standard Package 50
Category Discrete Semiconductor Products
Family FETs - Single
Series QFET™
FET T*e MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25° C 57A
Rds On (Max) @ Id, Vgs 23 mOhm @ 28.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 110nC @ 10V
Input Capacitance (Ciss) @ Vds 3300pF @ 25V
Power - Max 160W
Mounting T*e Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Packaging Tube
Catalog Page 1386 (US2011 Interactive)
1386 (US2011 PDF)
友情链接: 深圳市元东发电子有限公司