台湾富鼎APEC
AP20GT60P
结型(JFET)
N沟道
耗尽型
MW/微波
CHIP/小型片状
GE-N-FET锗N沟道
.(V)
.(V)
.(μS)
.(pF)
类型:经销商
电话:
联系人:古委利
地址:广东深圳中国 广东 深圳市 深圳市华强北路赛格广场二楼
∟ 结型场效应管(15)
Bitmap
| Package | Configuration | Vces(V) | Vge(&plu*n;V) | Ic(A) | PD(W) | Rthj-c IGBT (℃/W) | Rthj-c DIODE (℃/W) | Rthj-a (℃/W) | Vce(sat) (T* V) | Vge(th) (max V) | ||||
25°C | 100°C | 25°C | |||||||||||||
AP20GT60P | TO-220(P) |
| 600 | 20 | 60 | 20 | 104 | 1.2 |
| 62.5 | 1.8 | 6 | |||
AP20GT60W | TO-*(W) |
| 600 | 20 | 40 | 20 | 125 |
|
| 40 | 1.8 | 6 | |||
AP20GT60SW | TO-*(W) |
| 600 | 20 | 40 | 20 | 125 | 1 | 1.5 | 40 | 2.3 | 6 | |||
AP28G40GEO | TSSOP-8(O) | With *D Diode | 400 | 6 | 150 |
| 1 |
|
| 125 | 5.2 | 1.2 | |||
AP28G45GEO | TSSOP-8(O) | With *D Diode | 400 | 6 | 150 |
| 1 |
|
| 125 | 5.2 | 1.2 | |||
AP30G100SW | TO-*(W) | With FRD | 1000 | 30 | 60 | 30 | 208 | 0.6 | 3.75 | 40 | 3 | 7 | |||
AP30G100W | TO-*(W) |
| 1000 | 30 | 60 | 30 | 208 | 0.6 |
| 40 | 3 | 7 | |||
AP30G120SW | TO-*(W) | With FRD | 1200 | 30 | 60 | 30 | 208 | 0.6 | 3.75 | 40 | 3 | 7 | |||
AP30G120ASW | TO-*(W) | With FRD | 1200 | 30 | 60 | 30 | 208 | 0.6 | 2 | 40 | 3 | 7 | |||
AP30G120W | TO-*(W) |
| 1200 | 30 | 60 | 30 | 208 | 0.6 |
| 40 | 3 | 7 | |||
AP40G120W | TO-*(W) |
| 1200 | 20 | 80 | 40 | 208 | 0.6 |
| 40 | 3.15 | 7 | |||
AP50G60SW | TO-*(W) | With FRD | 600 | 30 | 75 | 45 | 300 | 0.42 | 1.5 | 40 | 2.6 | 6 | |||
AP85G33W | TO-*(W) |
| 330 | 30 | 90 |
| 208 | 0.6 |
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|
| |||
AP90G27W | TO-*(W) |
| 270 | 30 | 90 |
| 150 | 0.833 |
| 40 | 1.6 | 5 |
友情链接: 深圳市元东发电子有限公司