是
ISC
2SA680
放大
硅(Si)
PNP型
平面型
直插型
金属封装
企业名：无锡固电半导体股份有限公司
类型：生产企业
电话： 0510-85346980
联系人：谈增琴
QQ： 
邮箱：wisca@pub.jsinfo.com
地址：江苏无锡无锡新区新梅路68号
D*CRIPTION
·High Power Dissipation-
: PC= 100W(Max.)@TC=25℃
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min.)
·Complement to T*e 2SC1080
APPLICATIONS
·Designed for audio power amplifier applications.
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -100 | V |
VCEO | Collector-Emitter Voltage | -100 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -12 | A |
IE | Emitter Current-Continuous | 12 | A |
PC | Collector Power Dissipation @TC=25℃ | 100 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -65~150 | ℃ |
ELE*RICAL CHARA*ERISTICS
Tj=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -100mA ;IB= 0 | -100 |
|
| V |
V(BR)EBO | Emitter-Base Breakdown Voltage | IE= -10mA ;IC= 0 | -5 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -10A; IB= -1A |
|
| -3.0 | V |
VBE(on) | Base-Emitter On Voltage | IC= -10A ; VCE= -5V |
|
| -2.5 | V |
ICBO | Collector Cutoff Current | VCB= -50V; IE= 0 |
|
| -0.1 | mA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -0.1 | mA |
hFE-1 | DC Current Gain | IC= -2A ; VCE= -5V | 40 |
| 140 |
|
hFE-2 | DC Current Gain | IC= -7A ; VCE= -5V | 15 |
|
|
|
COB | Output Capacitance | VCB= -10V; ftest= 1MHz |
| 900 |
| pF |
fT | Current-Gain—Bandwidth Product | IC= -2A ; VCE= -5V |
| 6 |
| MHz |
u hFE-1Cl*ifications
R | Y |
40-80 | 70-140 |
友情链接： 深圳市元东发电子有限公司
