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Si4410DYPbF  HEXFET Power MOSFET

VDSS = 30V RDS(on) = 0.0135Ω
N-Channel MOSFET
Low On-Resistance
Low Gate Charge
Surface Mount
Logic Level Drive
Lead-Free
Parameter Max. Units
RθJA Maximum Junction-to-Ambient 50 °C/W
Thermal Resistance
This N-channel HEXFET Power MOSFET is
produced using International Rectifier's advanced
HEXFET power MOSFET technology. The low onresistance
and low gate charge inherent to this
technology make this device ideal for low voltage or
battery driven power conversion applications
The SO-8 package with copper leadframe offers
enhanced thermal characteristics that allow power
dissipation of greater that 800mW in t*ical board
mount applications.

企业名：深圳市粤嘉鸿电子有限公司

类型：经销商

电话： 755-29743120

联系人：宋哲

地址：广东深圳9区白金大厦1601室