Features

• Extremely low gate charge

• Lower RDS(on) x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

• LLC converters, resonant converters

Description

This device is an N-channel Power MOSFET

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Qg. This

revolutionary Power MOSFET associates a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters

企业名：深圳市宁丰科技信息有限公司

类型：贸易/代理/分销

电话： 0755-83268582
0755-83268582

手机：13316880609
13312991572

联系人：岳小姐/代生

QQ：

邮箱：747314849@qq.com

地址：广东深圳福田区振华路122号海外装饰大厦B栋7B-49