These N-channel Power MOSFETs are

developed using STMicroelectronics'

revolutionary MDmesh™ technology, which

associates the multiple drain process with the

company's PowerMESH™ horizontal layout.

These devices offer extremely low on-resistance,

high dv/dt and excellent avalanche

characteristics. Utilizing ST's proprietary strip

technique, these Power MOSFETs boast an

overall dynamic performance which is superior to

similar products on the market.

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