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               一级代理EMB09N03HR杰力EMC MOS 电源IC                      一级代理EMB09N03HR杰力EMC MOS EMB06N03A产品部份参数

STATIC

Drain‐Source Breakdown VoltagV(BR)DSS VGS = 0V, ID = 250A 30     V

Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1 1.5 3

Gate‐Body Leakage IGSS VDS = 0V, VGS = ±20V     ±100 nA

Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V     1 A

VDS = 20V, VGS = 0V, TJ = 125 °C     25

On‐State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 80     A

Drain‐Source On‐State Resistance1 RDS(ON) VGS = 10V, ID = 30A    5.3 6

mΩ

VGS = 4.5V, ID = 20A    7.5 9.5

Forward Transconductance1 gfs VDS = 5V, ID = 24A    25 S

DYNAMIC

Input Capacitance Ciss  

VGS = 0V, VDS = 15V, f = 1MHz

1983

Output Capacitance C pF oss    328

Reverse Transfer Capacitance    Crss    287

Gate Resistance Rg VGS = 15mV, VDS = 0V, f = 1MHz    1.2   Ω

Total Gate Charge1,2 Qg(VGS=10V)

VDS = 15V, VGS = 10V,

ID = 30A

34.6

nC Qg(VGS=4.5V) 21

Gate‐Source Charge1,2 Qgs    4.8

Gate‐Drain Charge1,2 Qgd    9.7

Turn‐On Delay Time1,2 td(on)     9  

nS Rise Time1,2 tr VDS = 15V,     20

Turn‐Off Delay Time1,2 td(off) ID = 25A, VGS = 10V, RGS = 2.7Ω    25

Fall Time1,2 tf     3  

SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current IS       80

A

Pulsed Current3 ISM       170

Forward Voltage1 VSD IF = IS, VGS = 0V     1.3 V

Reverse Recovery Time    trr     32 nS

Peak Reverse Recovery Current IRM(REC) IF = IS, dlF/dt = 100A / S 200 A

Reverse Recovery Charge Qrr     12 nC

一级代理EMB09N03HR杰力EMC MOS EMB06N03A

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