NGTB40N120FL2WG
ON(安森美)
无铅环保型
30 V
535 W
- 55 ℃
175 ℃
企业名:深圳市中立信电子科技有限公司
类型:贸易/代理/分销
电话:
0755-23956688
0755-23956688
手机:13410226883
联系人:叶先生/王先生
邮箱:Lee@zlxele.com
地址:广东深圳深圳市福田区彩田路彩虹新都大厦彩荟阁7A室
NGTB40N120FL2WG
IGBT 晶体管 1200V/40A FAST IGBT Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
NGTB40N120FL2WG Features
• Extremely Efficient Trench with Field Stop Technology
• TJmax = 175°C
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• 10 s Short Circuit Capability
• These are Pb−Free Devices
NGTB40N120FL2WG Typical Applications
• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS)
• Welding
型号: NGTB40N120FL2WG
制造商: ON Semiconductor
产品种类: IGBT 晶体管
RoHS: 无铅环保
技术: Si
封装 / 箱体: TO-247
安装风格: Through Hole
配置: Single
集电极—发射极电压 VCEO: 1200 V
集电极—射极饱和电压: 2 V
栅极/发射极电压: 30 V
在25 C的连续集电极电流: 80 A
Pd-功率耗散: 535 W
工作温度: - 55 ℃
工作温度: + 175 ℃
系列: NGTB40N120FL2
封装: Tube
商标: ON Semiconductor
栅极—射极漏泄电流: 200 nA
产品类型: IGBT Transistors
工厂包装数量: 30
子类别: IGBTs
单位重量: 6.500 g
企业名:深圳市中立信电子科技有限公司
类型:贸易/代理/分销
电话:
0755-23956688
0755-23956688
手机:13410226883
联系人:叶先生/王先生
邮箱:Lee@zlxele.com
地址:广东深圳深圳市福田区彩田路彩虹新都大厦彩荟阁7A室