600V N-Channel MOSFET
Features
■ 4.5A,600v,RDS(on)=2.2Ω@VGS=10V
■ Gate charge (T*ical 17nC)
■ High ruggedness
■ Fast switching
■ 100% AvalancheTested
■ Improved dv/dt capability
General Description
This Power MOSFET is produced using Truesemi’s advanced
planar stripe, DMOS technology.This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics, such as fast switching time,low
on resistance.low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at AC
adaptors, on the battery charger and SMPS

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企业名：深圳市粤嘉鸿电子有限公司

类型：经销商

电话： 755-29743120

联系人：宋哲

地址：广东深圳9区白金大厦1601室