Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, V_GS @ 10V (Silicon Limited)

57

A

ID @ TC = 100°C

Continuous Drain Current, V_GS @ 10V

40

IDM

Pulsed Drain Current CD

230

PD @TC = 25°C

Power Dissipation

92

W

Linear Derating Factor

0.61

W/°C

VGS

Gate-to-Source Voltage

± 20

V

EAS (Thermally limited)

Single Pulse Avalanche EnergyG)

73

mJ

E_AS (Tested )

Single Pulse Avalanche Energy Tested Value ®

110

IAR

Avalanche Current CD

See Fig.12a, 12b, 15, 16

A

EAR

Repetitive Avalanche Energy @

mJ

TJ

TSTG

Operating Junction and

Storage Temperature Range

-55  to + 175

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Mounting Torque, 6-32 or M3 screw 0

10 lbf•in (1.1N•m)