Parameter

Max.

Units

ID @ T_C = 25°C

Continuous Drain Current, V_GS @ 10V (Silicon Limited)

39

A

ID @ T_C = 100°C

Continuous Drain Current, V_GS @ 10V (See Fig. 9)

28

ID @ T_C = 25°C

Continuous Drain Current, V_GS @ 10V (Package Limited)

30

IDM

Pulsed Drain Current CD

150

PD @T_C = 25°C

Maximum Power Dissipation

120

W

Linear Derating Factor

0.77

W/°C

VGS

Gate-to-Source Voltage

± 16

V

EAS

Single Pulse Avalanche Energy (Thermally Limited) Q)

180

mJ

E_AS (tested)

Single Pulse Avalanche Energy Tested Value 0

250

IAR

Avalanche Current CD

See Fig.12a,12b,15,16

A

EAR

Repetitive Avalanche Energy ®

mJ

dv/dt

Peak Diode Recovery dv/dt Q)

2.3

V/ns

TJ

TSTG

Operating Junction and

Storage Temperature Range

-55 to + 175

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case )