IR/国际整流器
IRF540N
*缘栅(MOSFET)
N沟道
增强型
MOS-HBM/半桥组件
P-DIT/塑料双列直插
N-FET硅N沟道
企业名：陈煌全
类型：经销商
电话： 0769-85325785
联系人：陈煌全
地址：广东东莞长安镇厦边管理区/深圳市宝安区光明新区田寮管理区
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Description
友情链接： 深圳市元东发电子有限公司
