| 品牌/商标 | 台湾Sipu | 型号/规格 | FDN335N/SP335N |
| 种类 | *缘栅(MOSFET) | 沟道类型 | N沟道 |
| 导电方式 | 增强型 | 用途 | MOS-ARR/陈列组件 |
| 封装外形 | SMD(SO)/表面封装 | 材料 | GaAS-FET砷化镓 |
General Description
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
*ior switching performance.
Applications
• DC/DC converter
• Load switch
Features
• 1.7 A, 20 V. RDS(ON) = 0.07 W @ VGS = 4.5 V
RDS(ON) = 0.100 W @ VGS = 2.5 V.
• Low gate charge (3.5nC t*ical).
• High performance trench technology for extremely
low RDS(ON).
• High power and current handling capability.
友情链接： 深圳市元东发电子有限公司
