Alpha/阿尔法
AO7800
*缘栅(MOSFET)
N沟道
增强型
MOS-HBM/半桥组件
SMD(SO)/表面封装
GE-N-FET锗N沟道
20（V）
8（V）
4（μS）
120（pF）
企业名：陈煌全
类型：经销商
电话： 0769-85325785
联系人：陈煌全
地址：广东东莞长安镇厦边管理区/深圳市宝安区光明新区田寮管理区
AO7800
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7800 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V, in the
*all SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.It
is *D protected. Standard Product AO7800 is Pbfree
(meets ROHS & Sony 259 specifications).
AO7800L is a Green Product ordering option.
AO7800 and AO7800L are electrically identical
Features
VDS (V) = 20V
ID = 0.9 A (VGS = 4.5V)
RDS(ON) < 300mΩ (VGS = 4.5V)
RDS(ON) < 350mΩ (VGS = 2.5V)
RDS(ON) < 450mΩ (VGS = 1.8V)
友情链接： 深圳市元东发电子有限公司
