FUM美国富士通微电子
FQD5N60C
*缘栅(MOSFET)
N沟道
增强型
L/功率放大
SMD(SO)/表面封装
N-FET硅N沟道
200(V)
600(V)
5.0(pF)
`(dB)
企业名:深圳市泰兴发电子有限公司
类型:生产加工
电话: 0755-82533222
联系人:许惠谦
地址:广东深圳福田区华强北路华强广场Q2C042室
FQD5N60C / FQU5N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide *ior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge *ology.
Features
• 2.8A, 600V, RDS(on) = 2.5Ω @VGS = 10 V
• Low gate charge ( t*ical 15 nC)
• Low Crss ( t*ical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
友情链接: 深圳市元东发电子有限公司