HGTG12N60A4D 制造商:	onsemi
产品种类:	IGBT 晶体管
RoHS:	详细信息
技术:	Si
封装 / 箱体:	TO-247-3
安装风格:	Through Hole
配置:	Single
集电极—发射极zui大电压 VCEO:	600 V
集电极—射极饱和电压:	2 V
栅极/发射极zui大电压:	- 20 V, 20 V
在25 C的连续集电极电流:	54 A
Pd-功率耗散:	167 W
zui小工作温度:	- 55 C
zui大工作温度:	%2B 150 C
系列:	HGTG12N60A4D
封装:	Tube
商标:	onsemi / Fairchild
集电极连续电流:	60 A
集电极zui大连续电流 Ic:	54 A
栅极—射极漏泄电流:	%2B/- 250 nA
高度:	20.82 mm
长度:	15.87 mm
产品类型:	IGBT Transistors
工厂包装数量:	450
子类别:	IGBTs
宽度:	4.82 mm
零件号别名:	HGTG12N60A4D_NL
单位重量:	6.390 g

The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on?state conduction loss of a bipolar transistor. The much lower on?state voltage drop varies only moderately between 25?C and 150?C. The IGBT used is the development type TA49335. The diode used in anti?parallel is the development type TA49371. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49337. Features ? >100 kHz Operation 390 V, 12 A ? 200 kHz Operation 390 V, 9A ? 600 V Switching SOA Capability ? Typical Fall Time 70 ns at TJ = 125?C ? Low Conduction Loss ? Temperature Compensating Saber? Model ? Related Literature ? TB334 “GuHGTG12N60A4DHGTG12N60A4Didelines for Soldering Surface Mount Components to PC Boards” ? These are Pb?Free Devices

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