BlueRocket/蓝箭电子 BRCS20P06DP P沟道TO-252塑封封装场效应管

Descriptions

BRCS20P06DP P-CHANNEL MOSFET in a TO-252 Plastic Package.

Electrical Characteristics(Ta=25℃)
● Drain–Source Breakdown Voltage: -60~-70V
● Zero Gate Voltage Drain Current
VDS=-60V VGS=0V: -1.0μA
VDS=-60V VGS=0V TJ=55°C: -5.0μA
● Gate-Body leakage current : ±0.1μA
● Gate Threshold Voltage: -1V -1.7V -2.5V
● Static Drain-Source On-state
VGS=-110V, ID=-20A: 87~92mΩ
VGS=-14.5V, ID=-10A: 98~102mΩ
● Drain-Source Diode Forward Voltage: -0.7~-1.2V
● Input Capacitance: 1650pF
● Output Capacitance: 330pF
● Reverse Transfer Capacitance: 205pF
● Gate resistance: 6.4Ω
● Total Gate Charge (10V): 7.5nC
● Total Gate Charge (4.5V): 3.8nC
● Gate-Source Charge: 1.2nC
● Gate-Drain Charge: 1.9nC
● Turn–On Delay Time: 4.2ns
● Turn–On Rise Time: 3.4ns
● Turn–Off Delay Time: 16ns
● Turn–Off Fall Time: 2ns
● Body Diode Reverse Recovery Time: 27ns
● Body Diode Reverse Recovery Charge: 30nC

BRCS20P06DP产品规格书

企业名：深圳市科瑞芯电子有限公司

类型：贸易/代理/分销

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