MICROCHIP/微芯
T*420VOA
*缘栅(MOSFET)
N沟道
增强型
D/变频换流
SMD(SO)/表面封装
GaAS-FET砷化镓
20(V)
5(V)
25(μS)
20(pF)
企业名:宁波普阳电子有限公司
类型:
电话: 86 0574 87737972
联系人:奚圣建
地址:浙江宁波中国 浙江 宁波市鄞州区 横溪镇
∟ 桥堆/整流桥/桥式整流器(1)∟ 快/超快/特快恢复二极管(4)∟ 瞬态(变)抑制二极管(2)∟ 肖特基二极管(1)
Features
• Latch-Up Protected: Will Withstand >1.5A
Reverse Output Current
• Logic Input Will Withstand Negative Swing Up To
5V
• *D Protected: 4 kV
• Matched Rise and Fall Times:
- 25 ns (2500 pF load)
• High Peak Output Current: 6A
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability: 10,000 pF
• Short Delay Time: 55 ns (t*.)
• CMOS/TTL Compatible Input
• Low Supply Current With Logic ‘1’ Input:
- 450μA (t*.)
• Low Output Impedance: 2.5Ω
• Output Voltage Swing to Within 25 mV of Ground
or VDD
• Space-Saving 8-Pin SOIC and 8-Pin 6x5 DFN
友情链接: 深圳市元东发电子有限公司