无锡固电ISC供应2SD1632三*管

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D*CRIPTION

·Collector-Base Breakdown Voltage-

: V_CBO= 1500V (Min.)

·High Switching Speed

·Built-in Damper Diode

APPLICATIONS

·Designed for horizontal deflection output applications

.

*SYOL**	PARAMETER	VALUE	UNIT
V_CBO	Collector- Base Voltage	1500	V
V_C*	Collector-Emitter Voltage	1500	V
V_EBO	Emitter-Base Voltage	5	V
I_C	Collector Current-Continuous	4	A
I_CM	Collector Current-Peak	15	A
I_BM	Base Current-Peak	3.5	A
P_C	Collector Power Dissipation @ T_C=25℃	70	W
T_J	JunctionTemperature	130	℃
T_stg	StorageTemperature Range	-55~130	℃

ELE*RICAL CHARA*ERISTICS

T_C=25℃unless otherwise specified

*SYOL**	PARAMETER	CONDITIONS		MIN	TYP.	MAX	UNIT
V_(BR)EBO	Emitter-Base Breakdown Voltage	I_E= 500mA; I_C= 0		5			V
V_CE_(sat)	Collector-Emitter Saturation Voltage	I_C= 3A; I_B= 1A				1.0	V
V_BE_(sat)	Base-Emitter Saturation Voltage	I_C= 3A; I_B= 1A				1.5	V
I_CBO	Collector Cutoff Current	V_CB= 750V; I_E= 0 V_CB= 1500V; I_E= 0				50 1.0	μA mA
h_FE	DC Current Gain	I_C= 3A; V_CE= 10V		5		15
V_ECF	C-E Diode Forward Voltage	I_F= 4A				2.2	V
Switching times
t_stg	Storage Time		I_C= 3A; I_B(_end₎= 1A; L_leak= 5μH			9.0	μs
t_f	Fall Time		I_C= 3A; I_B(_end₎= 1A; L_leak= 5μH			0.8	μs