IR/国际整流器
IRGB6B60KD
*缘栅(MOSFET)
N沟道
增强型
HI-REL/高*性
CER-DIP/陶瓷直插
GaAS-FET砷化镓
1(V)
600(V)
1(μS)
1(pF)
企业名:深圳市谷度科技有限公司
类型:经销商
电话: 755-83013455
联系人:罗少聪
地址:广东深圳深圳市华强北路华强广场D座13C
*原装IGBT 13A 600V 90W N沟
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
友情链接: 深圳市元东发电子有限公司