| 品牌：ST/意法 | 型号：ST2302 | 种类：*缘栅(MOSFET) |
| 沟道类型：N沟道 | 导电方式：增强型 | 用途：MIN/微型 |
| 封装外形：SMD(SO)/表面封装 | 材料：GE-N-FET锗N沟道 | 开启电压：20（V） |
| 夹断电压：12（V） | 跨导：-（μS） | *间电容：,（pF） |
| 低频噪声系数：,（dB） | *大漏*电流：,（mA） | *大耗散功率：,（mW） |
N Channel Enchancement Mode MOSFET ST2302
3.6A
D*CRIPTION
The ST2302 is the N-Channel logic enhancement mode power field effect transistor are
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other batter powered circuits, and low in-line
power loss are needed in a very *all outine surface mount package.
FEATURE
z 20V/3.6A, RDS(ON) = 80m-ohm
@VGS = 4.5V
z 20V/2.4A, RDS(ON) = 95m-ohm
@VGS = 2.5V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOT-23-3L package design
友情链接： 深圳市元东发电子有限公司
