IR/国际整流器
IRF840PBF
*缘栅(MOSFET)
N沟道
耗尽型
L/功率放大
CER-DIP/陶瓷直插
N-FET硅N沟道
20(V)
20(V)
1(μS)
1(pF)
企业名:深圳市科沃科技有限公司
类型:生产加工
电话: 755-26441258
联系人:何岚
地址:广东深圳南山区深南大道12069号海岸时代大厦西座1202室
大量IRF840PBF 优惠价格供应,原装,*十。
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SY*OL LIMIT UNIT
Drain-Source Voltage VDS 500 V
Gate-Source Voltage VGS &plu*n; 20 V
Continuous Drain Current VGS at 10 V
TC = 25 °C
ID
8.0
TC = 100 °C 5.1 A
Pulsed Drain Currenta IDM 32
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energyb EAS 510 mJ
Repetitive Avalanche Currenta IAR 8.0 A
Repetitive Avalanche Energya EAR 13 mJ
Maximum Power Dissipation TC = 25 °C PD 125 W
Peak Diode Recovery dV/dtc dV/dt 3.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300d
友情链接: 深圳市元东发电子有限公司