场效应管:FQP4N90C(4N90C)品牌:*童,产地:美国.广泛应用UPS电源等等产品.电流:4.2A,耐压900V,TO-220封装.
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FQP4N90
900V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide *ior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
• 4.2A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V
• Low gate charge ( t*ically 24 nC)
• Low Crss ( t*ically 9.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter FQP4N90 Units
VDSS Drain-Source Voltage 900 V
ID Drain Current - Continuous (TC = 25°C) 4.2 A
- Continuous (TC = 100°C) 2.65 A
IDM Drain Current - Pulsed (Note 1) 16.8 A
VGSS Gate-Source Voltage &plu*n; 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 570 mJ
IAR Avalanche Current (Note 1) 4.2 A
EAR Repetitive Avalanche Energy (Note 1) 14 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns
PD Power Dissipation (TC = 25°C) 140 W
- Derate above 25°C 1.12 W/°C
TJ, Tstg Operating and Storage Temperature Range -55 to 150 °C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Symbol Parameter T* Max Units
RθJC Thermal Resistance, Junction-to-Case -- 0.89 °C/W
RθCS Thermal Resistance, Case-to-Sink 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

企业名：深圳市宝安区沙井镇荣兴电子经营部

类型：生产加工

电话： 0755-61127822

联系人：刘国斌

地址：广东深圳宝安沙井电子城A605