FAIRCHILD/*童
FQP10N60C
*缘栅(MOSFET)
N沟道
增强型
SW-REG/开关电源
N-FET硅N沟道
10(V)
600(V)
18(pF)
2(dB)
10000(mA)
企业名:陈培忠
类型:经销商
电话: 0755-84746465
联系人:陈培忠
地址:广东深圳福田区现代国际大厦
∟ 整流二极管(5)∟ 快/超快/特快恢复二极管(18)
FQP10N60C / FQPF10N60C
600V N-Channel MOSFET
Features
• 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V
• Low gate charge ( t*ical 44 nC)
• Low Crss ( t*ical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transistors
are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to minimize
on-state resistance, provide *ior switching performance,
and withstand high energy pulse in the avalanche and
commutation mode. These devices are suited for high efficiency
switched mode power supplies, active power factor correction,
electronic lamp ballasts based on half bridge *ology.
友情链接: 深圳市元东发电子有限公司