| 品牌/商标 | TOSHIBA/长电 | 型号/规格 | 2SA1037 |
| 应用范围 | 功率 | 功率特性 | *率 |
| 频率特性 | 中频 | *性 | PNP型 |
| 结构 | 点接触型 | 材料 | 硅(Si) |
| 封装形式 | sot-23 | 封装材料 | 树脂封装 |
| 截止频率fT | 150（MHz） | 集电**大允许电流ICM | 100m（A） |
| 集电**大耗散功率PCM | 200m（W） | 营销方式 | 现货 |
| 产品性质 | * |
*现货供应 三*管2SA1037
2SA1037
2SA1037
Elektronische Bauelemente - 0.15A, - 50V
Small Signal Plastic Encapsulate Transistor
RoHS Compliant Product A suffix of "-C" specifies halogen lead-free
3.Collector
SOT-23
1. Base 2. Emitter
Top View
FEATUR*
. Excellent h linearity. . Epitaxial planar t*e. . PNP silicon transistor.
Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450
Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600
MECHANICAL DATA
. Case: SOT-23, Molded Plastic . Terminals: Solderable per MIL-STD-202,
Method 208
. Polarity: See Diagrams Below . Weight: 0.008 grams (approx.) . Mounting Position: Any
All Dimension in mm
ABSOLUTE MAXIMUM RATINGS
Rating 25 ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20. TYPE NU*ER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Temperature Storage Temperature Range SY*OL VCBO VCEO VEBO IC PC TJ TSTG LIMITS - 60 - 50 -6 - 0.15 0.2 150 -55 ~ +150 UNIT V V V A W
http:www.SeCoSGmbH.com
Any changing of specification will not be informed individual
2SA1037
Elektronische Bauelemente - 0.15A, - 50V
Small Signal Plastic Encapsulate Transistor
TYPE NU*ER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance SY*OL BVCBO BVCEO BVEBO ICBO IEBO VCE (sat) hFE fT Cob Min. - 60 - 50 -6 120 -
hFE VALU* ARE CLASSIFIED AS FOLLOWS:
ITEM hFE Marking Q 120 ~ 270 FQ R 180 ~ 390 FR S 270 ~ 560 FS
ELE*RICAL CHARA*ERISTIC CURV*
COLLE*OR CURRENT : Ic (mA)
COLLE*OR CURRENT : IC (mA)
BASE TO EMITTER VOLTAGE : VBE (V)
COLLE*OR TO MITTER VOLTAGE : VCE (V)
COLLE*OR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics (I)
Fig.3 Grounded emitter output characteristics (II)
http:www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
2SA1037
Elektronische Bauelemente - 0.15A, - 50V
Small Signal Plastic Encapsulate Transistor
COLLE*OR SATURATION VOLTAGE : VCE(sat) (V)
DC CURRENT GAIN : hFE
COLLE*OR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current (I)
Fig.5 DC current gain vs. collector current (II)
Fig.6 Collector-emitter saturation voltage vs. collector current (I)
COLLE*OR SATURATION VOLTAGE : VCE(sat) (V)
TRANSITION FREQUENCY : fT (MHz)
COLLE*OR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF)
COLLE*OR CURRENT : IC (mA)
EMITTER CURRENT : IE (mA)
COLLE*OR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector-emitter saturation voltage vs. collector current (II)
Fig.8 Gain bandwidth product vs. emitter current
Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage
http:www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
友情链接： 深圳市元东发电子有限公司
