| 品牌/商标 | ON/*童/长电 | 型号/规格 | MPSA05 |
| 应用范围 | 放大 | 功率特性 | *率 |
| 频率特性 | 中频 | *性 | NPN型 |
| 结构 | 点接触型 | 材料 | 硅(Si) |
| 封装形式 | to-92 | 封装材料 | 树脂封装 |
| 截止频率fT | 50（MHz） | 集电**大允许电流ICM | 500m（A） |
| 集电**大耗散功率PCM | 625m（W） | 营销方式 | 现货 |
| 产品性质 | * |
*现货供应 三*管MPSA05
=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Thermal Characteristics TA=25°C unless otherwise noted
* Device mounted on FR-4 PCB 1.6” × 0.06"
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 60 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 4.0 V
IC Collector current - Continuous 500 mA
TJ, Tstg Junction and Storage Temperature -55 ~ +150 °C
Symbol Parameter Test Condition Min. T*. Max. Units
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 1mA, IB = 0 60 V
V(BR)EBO Emitter-Base Breakdown Voltage IC = 100μA, IC = 0 4 V
ICEO Collector Cutoff Current VCE = 60V, IB = 0 0.1 μA
ICBO Emitter Cutoff Current VCB = 60V, IE = 0 0.1 μA
On Characteristics
hFE DC Current Gain IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
100
100
VCE(sat) Collector-Emitter Saturation Voltage IC = 100mA, IB = 10mA 0.25 V
VBE(on) Base-Emitter On Voltage IC = 100mA, VCE = 1.0V 1.2 V
Small Signal Characteristics
fT Current Gain Bandwidth Product IC = 10mA, VCE = 2V,
f = 100MHz
100 MHz
Symbol Parameter
Max.
Units
MPSA05 *M*TA05
PD Total Device Dissipation
Derate above 25°C
625
5
350
2.8
mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W
友情链接： 深圳市元东发电子有限公司
