TOSHIBA/东芝
2SK2967 K2967
结型(JFET)
P沟道
耗尽型
MW/微波
CER-DIP/陶瓷直插
*肖特基势垒栅
22(V)
22(V)
22(μS)
22(pF)
类型:经销商
电话:
联系人:陈义伟
地址:广东深圳中国 广东 深圳市福田区 华强三店3A132(佳和大厦)
∟ 结型场效应管(267)
TOSHIBA*原装场效应管 2SK2967 K2967
TOSHIBA*原装场效应管 2SK2967 K2967
2SK2967 K2967产品规格 参数
Datasheets 2SK2967
Mosfets Prod Guide
Product Photos 2SK2967(F)
Standard Package 50
Category Discrete Semiconductor Products
Family FETs - Single
Series -
FET T*e MOSFET N-Channel, Metal Oxide
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25° C 30A
Rds On (Max) @ Id, Vgs 68 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Gate Charge (Qg) @ Vgs 132nC @ 10V
Input Capacitance (Ciss) @ Vds 5400pF @ 10V
Power - Max 150W
Mounting T*e Through Hole
Package / Case TO-*-3, SC-65-3
Supplier Device Package TO-*(N)
Packaging Tube
友情链接: 深圳市元东发电子有限公司