HGTG10N120BND
ON(安森美)
TO247
无铅环保型
直插式
管装
企业名:深圳市尚想信息技术有限公司
类型:贸易/代理/分销
电话:
0755-83948880
0755-8398880
手机:15323892334
18182115682
联系人:姚小姐/邓小姐
微信:
邮箱:assistant@sunshineic.com
地址:广东深圳福田区振兴路上步工业区405栋6楼603室
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49302
企业名:深圳市尚想信息技术有限公司
类型:贸易/代理/分销
电话:
0755-83948880
0755-8398880
手机:15323892334
18182115682
联系人:姚小姐/邓小姐
微信:
邮箱:assistant@sunshineic.com
地址:广东深圳福田区振兴路上步工业区405栋6楼603室