FDD86102LZ
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 35 A, 22.5 mΩ
Features
„ Shielded Gate MOSFET Technology
„ Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A
„ Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A
„ HBM ESD protection level > 6 kV typical (Note 4)
„ Very low Qg and Qgd compared to competing trench
technologies
„ Fast switching speed
„ 100% UIL tested
„ RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for the on-state resistance and switching loss. G-S
zener has been added to enhance ESD voltage level.
Applications
„ DC - DC Conversion
„ Inverter
„ Synchronous Rectifier

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