Power MOSFET 40 V, 3 m, 107 A, Single N−Channel Features • Small Footprint (3.3x3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RJC (Notes 1, 3) Steady State TC = 25°C ID 107 A TC = 100°C 75 Power Dissipation RJC (Note 1) TC = 25°C PD 68 W TC = 100°C 34 Continuous Drain Current RJA (Notes 1, 2, 3) Steady State TA = 25°C ID 23 A TA = 100°C 16 Power Dissipation RJA (Notes 1 & 2) TA = 25°C PD 3.3 W TA = 100°C 1.6 Pulsed Drain Current TA = 25°C, tp = 10 s IDM 740 A Operating Junction and Storage Temperature TJ, Tstg −55 to +175 °C Source Current (Body Diode) IS 76 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 7 A) EAS 215 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

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