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D*CRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= -100V(Min)

·HighDC Current Gain-

: h_FE=1000(Min)@ (V_CE= -3V, I_C= -2A)

·Complement to T*e 2SD2025

APPLICATIONS

·Designed for power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

*SYOL**	PARAMETER	VALUE	UNIT
V_CBO	Collector-Base Voltage	-100	V
V_CEO	Collector-Emitter Voltage	-100	V
V_EBO	Emitter-Base Voltage	-7	V
I_C	Collector Current-Continuous	-8	A
I_CM	Collector Current-Peak	-10	A
P_C	Collector Power Dissipation @T_a=25℃	2	W
P_C	Collector Power Dissipation @T_C=25℃	30	W
T_J	Junction Temperature	150	℃
T_stg	Storage Temperature	-55~150	℃

ELE*RICAL CHARA*ERISTICS

Tj=25℃unless otherwise specified

*SYOL**	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V_(BR)CEO	Collector-Emitter Breakdown Voltage	I_C= -5mA; I_B= 0	-100			V
V_(BR)CBO	Collector-BaseBreakdownVoltage	I_C= -50μA; I_E= 0	-100			V
V_CE_(sat)	Collector-Emitter Saturation Voltage	I_C= -3A; I_B= -6mA			-1.5	V
I_CBO	Collector Cutoff Current	V_CB= -100V; I_E= 0			-10	μA
I_EBO	Emitter Cutoff Current	V_EB= -5V; I_C= 0			-3	mA
h_FE	DC Current Gain	I_C= -2A; V_CE= -3V	1000		20000
C_OB	Output Capacitance	I_E= 0; V_CB= -10V; f_test= 1MHz		90		pF
f_T	Current-Gain—Bandwidth Product	I_E= 0.5A; V_CE= -5V; f_test= 10MHz		12		MHz