| 品牌：IR/国际整流器 | 型号：IRLL014TRPBF | 种类：*缘栅(MOSFET) |
| 沟道类型：N沟道 | 导电方式：增强型 | 用途：MOS-HBM/半桥组件 |
| 封装外形：SMD(SO)/表面封装 | 材料：GE-P-FET锗P沟道 |
原装现货FEATUR*
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Logic-Level Gate Drive
•RDS(on) Specified at VGS = 4 V and 5 V
•Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
D*CRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the * combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but
has the added advantage of improved thermal performace
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a t*ical surface mount
application.
友情链接： 深圳市元东发电子有限公司
