*原装现货，价格优惠，长期供货，Features
■ Low saturation voltage
■ High current capability
■ Low switching loss
■ Low static and peak forward voltage drop freewheeling
diode
Applications
■ Induction cooking, microwave oven
■ Soft switching application
Description
This IGBT utilizes the advanced PowerM*H™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior. This device is well suited for the
resonant or soft switching applications.

Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-247 long leads TO-247
VC* Collector-emitter voltage (VGE = 0) 1300 V
IC
(1)
1. Calculated according to the iterative formula:
Continuous collector current at TC = 25 °C 63 55 A
IC
(1) Continuous collector current at TC = 100 °C 33 25 A
ICL
(2)
2. Vclamp = 960 V, Tj =150 °C, RG=10 Ω, VGE=15 V
Turn-off latching current 40 A
ICP
(3)
3. Pulse width limited by maximum permissible junction temperature and turn-off within RBSOA
Pulsed collector current 125 A
VGE Gate-emitter voltage &plu*n;25 V
PTOT Total dissipation at TC = 25 °C 250 180 W
IF Diode RMS forward current at TC = 25 °C 30 A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
100 A
Tj Operating junction temperature –55 to 150 °C

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