N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET

in TO-220, TO-247, TO-3PF

Features

Type STFW3N150STP3N150STW3N150

■■■■■

V DSS 1500 V1500 V1500 V

R DS(on) max

< 9 Ω< 9 Ω< 9 Ω

I D

Pw

2.5 A63 W2.5 A140 W2.5 A140 W

100% avalanche tested

Intrinsic capacitances and Qg minimizedHigh speed switching

Fully isolated TO-3PF plastic packageCreepage distance path is 5.4 mm (typ.) for TO-3PF

Application

■

Switching applications

Description

Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the

company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.

企业名：深圳市海立辉科技有限公司

类型：

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地址：广东深圳深圳市福田区中航路世纪汇广场都会轩1415