TK2P90E,RQS
TOSHIBA(东芝)
TO-252
无铅环保型
贴片式
卷带编带包装
: 2.5 V
: 30 V
: 80 W
: 12 nC
企业名:深圳市中立信电子科技有限公司
类型:贸易/代理/分销
电话:
0755-23956688
0755-23956688
手机:13410226883
联系人:叶先生/王先生
邮箱:Lee@zlxele.com
地址:广东深圳深圳市福田区彩田路彩虹新都大厦彩荟阁7A室
TK2P90E,RQS
MOSFET N-Ch TT-MOSVIII 900V 80W 500pF 2A Silicon N-Channel MOS (π-MOS VIII)
Static Characteristics (Ta = 25 unless otherwise specified) TK2P90E,RQS
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance Symbol IGSS IDSS V(BR)DSS Vth RDS(ON) Test Condition VGS = ±30 V, VDS = 0 V VDS = 720 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 0.2 mA VGS = 10 V, ID = 1.0 A Min 900 2.5 Typ. 4.7 Max ±1 10 4.0 5.9 Unit μA V Ω
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) TK2P90E,RQS
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature (Tc = 25) (Note 1) (Note 1) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg Rating 900 ±30 2 6 80 157 2 2 6 150 -55 to 150 Unit V A W mJ A
Applications TK2P90E,RQS
• Switching Voltage Regulators
Features
(1) Low drain-source on-resistance: RDS(ON) = 4.7 Ω (typ.)
(2) Low leakage current : IDSS = 10 μA (max) (VDS = 720 V)
(3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.2 mA)
企业名:深圳市中立信电子科技有限公司
类型:贸易/代理/分销
电话:
0755-23956688
0755-23956688
手机:13410226883
联系人:叶先生/王先生
邮箱:Lee@zlxele.com
地址:广东深圳深圳市福田区彩田路彩虹新都大厦彩荟阁7A室