IR/国际整流器
IRFB20N50KPBF
*缘栅(MOSFET)
N沟道
耗尽型
GEP/互补类型
CER-DIP/陶瓷直插
GE-N-FET锗N沟道
500（V）
500（V）
50（μS）
1（pF）
企业名：深圳市长亮源科技有限公司
类型：生产加工
电话： 755-88878818
联系人：古苏波
地址：广东深圳福田区华强北路华强广场D座21楼J室
Technical/Catalog Information | IRFB20N50KPBF |
| Vendor | Vishay/Siliconix |
| Category | Discrete Semiconductor Products |
| Mounting T*e | Through Hole |
| FET T*e | MOSFET N-Channel, Metal Oxide |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Rds On (Max) @ Id, Vgs | 250 mOhm @ 12A, 10V |
| Input Capacitance (Ciss) @ Vds | 2870pF @ 25V |
| Power - Max | 280W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 110nC @ 10V |
| Package / Case | TO-220-3 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFB20N50KPBF IRFB20N50KPBF |
| Technical/Catalog Information | IRFB20N50KPBF |
| Vendor | Vishay/Siliconix |
| Category | Discrete Semiconductor Products |
| Mounting T*e | Through Hole |
| FET T*e | MOSFET N-Channel, Metal Oxide |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Rds On (Max) @ Id, Vgs | 250 mOhm @ 12A, 10V |
| Input Capacitance (Ciss) @ Vds | 2870pF @ 25V |
| Power - Max | 280W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 110nC @ 10V |
| Package / Case | TO-220-3 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFB20N50KPBF IRFB20N50KPBF |
IRFB20N50KPBF IRFB20N50KPBF IRFB20N50KPBF FB20N50K
友情链接： 深圳市元东发电子有限公司
