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  SPU02N60C3 Cool MOSô Power Transistor VDS @ Tjmax 650 V RDS(on) 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

  Maximum Ratings Parameter Symbol Value Unit Continuous drain current TC = 25 °C TC = 100 °C ID 1.8 1.1 A Pulsed drain current, tp limited by Tjmax ID puls 5.4 Avalanche energy, single pulse ID = 1.35 A, VDD = 50 V EAS 50 mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID = 1.8 A, VDD = 50 V EAR 0.07 Avalanche current, repetitive tAR limited by Tjmax IAR 1.8 A Gate source voltage static VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 25 W Operating and storage temperature Tj , Tstg -55... +150 °C

Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 V, ID = 1.8 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 5 K/W Thermal resistance, junction - ambient, leaded RthJA - - 75 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) RthJA - - - - 75 50 Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C

Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V Drain-Source avalanche breakdown voltage V(BR)DS VGS=0V, ID=0.25A - 700 - Gate threshold voltage VGS(th) ID=80μΑ, VGS=VDS 2.1 3 3.9 Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Tj =25°C, Tj=150°C - - 0.5 - 1 50 μA Gate-source leakage current IGSS VGS=30V, VDS=0V - - 100 nA Drain-source on-state resistance RDS(on) VGS=10V, I D=1.1A, Tj =25°C Tj =150°C - - 2.7 7.3 3 - Ω Gate input resistance RG f=1MHz, open Drain - 9

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