FAIRCHILD/*童
FQP5N60C
*缘栅(MOSFET)
N沟道
增强型
SW-REG/开关电源
N-FET硅N沟道
10(V)
600(V)
6.5(pF)
2(dB)
5000(mA)
企业名:陈培忠
类型:经销商
电话: 0755-84746465
联系人:陈培忠
地址:广东深圳福田区现代国际大厦
∟ 整流二极管(5)∟ 快/超快/特快恢复二极管(18)
FQP5N60C/FQPF5N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide *ior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge *ology.
Features
• 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V
• Low gate charge ( t*ical 15 nC)
• Low Crss ( t*ical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
友情链接: 深圳市元东发电子有限公司