无锡固电ISC 供应三*管BDW36

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D*CRIPTION

·Collector-Emitter Sustaining Voltage-

:V_CEO(SUS)= 180V(Min)

·High Switching Speed

·Low Collector Saturation Voltage-

: V_CE(_sat)= 1.0V(Max)@ I_C= 10A

APPLICATIONS

·Designed for use in industrial-military power amplifier and

switching circuit applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

*SYOL**	PARAMETER	VALUE	UNIT
V_CBO	Collector-Base Voltage	180	V
V_CEO	Collector-Emitter Voltage	180	V
V_EBO	Emitter-Base Voltage	7	V
I_C	Collector Current-Continuous	30	A
I_CM	Collector Current-Peak	50	A
I_B	Base Current-Continuous	10	A
P_C	Collector Power Dissipation @T_C=25℃	250	W
T_J	Junction Temperature	200	℃
T_stg	Storage Temperature	-65~200	℃

THERMAL CHARA*ERISTICS

*SYOL**	PARAMETER	MAX	UNIT
R_{th j-c}	Thermal Resistance,Junction to Case	0.875	℃/W

ELE*RICAL CHARA*ERISTICS

T_C=25℃unless otherwise specified

*SYOL**	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V_CEO(SUS)	Collector-Emitter Sustaining Voltage	I_C= 50mA; I_B= 0	150		V
V_CE_(sat)_-1	Collector-Emitter Saturation Voltage	I_C= 10A; I_B= 1A		1.0	V
V_CE_(sat)_-2	Collector-Emitter Saturation Voltage	I_C= 30A; I_B= 6A		3.0	V
V_BE_(sat)_-1	Base-Emitter Saturation Voltage	I_C= 10A; I_B= 1A		1.8	V
V_BE(_on₎	Base-Emitter On Voltage	I_C= 10A; V_CE= 4V		1.8	V
I_CEO	Collector Cutoff Current	V_CE= 90V; I_B= 0		50	μA
I_CBO	Collector Cutoff Current	V_CB=180V; I_E= 0		10	μA
I_EBO	Emitter Cutoff Current	V_EB= 6V; I_C= 0		0.1	mA
h_FE-1	DC Current Gain	I_C= 8A; V_CE= 4V	20	100
h_FE-2	DC Current Gain	I_C= 30A; V_CE= 4V	5
f_T	Current-Gain—Bandwidth Product	I_C= 1A ; V_CE= 10V	1		MHz