*现货供应 晶体管BC857A

BC857A
BC857B
BC857C
Discrete POWER & Signal
Technologies
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 68.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
*T*:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 45 V
VCBO Collector-Base Voltage 50 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current - Continuous 500 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to 150 °C
Symbol Characteristic Max Units
*BC857A / B / C
PD Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
RqJA Thermal Resistance, Junction to Ambient 357 °C/W
C
B
E
SOT-23
Mark: 3E / 3F / 3G
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.