是
ISC
2SD5072
放大
硅(Si)
NPN型
平面型
直插型
塑料封装
企业名：无锡固电半导体股份有限公司
类型：生产企业
电话： 0510-85346980
联系人：谈增琴
QQ： 
邮箱：wisca@pub.jsinfo.com
地址：江苏无锡无锡新区新梅路68号
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·High Reliability
·Built-in Damper Diode
APPLICATIONS
·Designed for color TV horizontal output applications
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 1500 | V |
VCEO | Collector-Emitter Voltage | 800 | V |
VEBO | Emitter-Base Voltage | 6 | V |
IC | Collector Current- Continuous | 5 | A |
ICM | Collector Current-Peak | 16 | A |
PC | Collector Power Dissipation @ TC=25℃ | 60 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELE*RICAL CHARA*ERISTICS
TC=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 4A; IB= 0.8A |
|
| 5.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 4A; IB= 0.8A |
|
| 1.5 | V |
ICBO | Collector Cutoff Current | VCB= 800V ; IE= 0 |
|
| 10 | μA |
IEBO | Emitter Cutoff Current | VEB= 4V ; IC= 0 | 40 |
| 200 | mA |
hFE | DC Current Gain | IC= 1A ; VCE= 5V | 8 |
|
|
|
VECF | C-E Diode Forward Voltage | IF= 5A |
|
| 2.0 | V |
fT | Current-Gain—Bandwidth Product | IC= 1A ; VCE= 10V |
| 3 |
| MHz |
tf | Fall Time | IC= 4A , IB1= 0.8A ; IB2= -1.6A RL= 50Ω;VCC= 200V |
|
| 0.4 | μs |
友情链接： 深圳市元东发电子有限公司
