IR/国际整流器
IRG4PH20KPBF
*缘栅(MOSFET)
N沟道
增强型
CC/恒流
CER-DIP/陶瓷直插
IGBT*缘栅比*
3.17(V)
1200(V)
1(pF)
1(dB)
企业名:深圳市谷度科技有限公司
类型:经销商
电话: 755-83013455
联系人:罗少聪
地址:广东深圳深圳市华强北路华强广场D座13C
*原装IGBT 11A 1200V 60W N沟
变频电源*!
INSULATED GATE BIPOLAR TRANSISTOR
Short Circuit Rated UltraFast IGBT
Features
Benefits
• High short circuit rating optimized for motor control,
tsc =10µs, VCC = 720V , TJ = 125°C,
VGE = 15V
• Combines low conduction losses with high
switching speed
• Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
• As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
• Latest generation 4 IGBT's offer highest power
density motor controls possible
友情链接: 深圳市元东发电子有限公司