UTC/友顺
4N60L
*缘栅(MOSFET)
N沟道
增强型
MOS-INM/*组件
GE-N-FET锗N沟道
600（V）
企业名：陈煌全
类型：经销商
电话： 0769-85325785
联系人：陈煌全
地址：广东东莞长安镇厦边管理区/深圳市宝安区光明新区田寮管理区
4 Amps, 600/650 Volts
N-CHANNEL POWER MOSFET
D*CRIPTION
The UTC 4N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATUR*
* RDS(ON) = 2.5Ω @VGS = 10 V
* Ultra Low Gate Charge ( t*ical 15 nC )
* Low Reverse Transfer CAPACITANCE ( CRSS = t*ical 8.0 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high Ruggedness
友情链接： 深圳市元东发电子有限公司
