产品型号:FQPF10N20C 200V N-Channel MOSFET

封装:TO-220F

品牌：FAIRCHILD/仙童

源漏极间雪崩电压V(br)dss(V):200

夹断电压VGS(V):±30

漏极电流Id(A):9.5

源漏极导通电阻rDS(on)(Ω):0.36 @VGS = 10 V

开启电压VGS(TH)(V):4

功率PD(W):38

输入电容Ciss(PF):395 typ.

通道极性:N沟道

低频跨导gFS(s)：5.5

单脉冲雪崩能量EAS(mJ):210

导通延迟时间Td(on)(ns):11 typ.

上升时间Tr(ns):92 typ.

关断延迟时间Td(off)(ns):70 typ.

下降时间Tf(ns):72 typ.

温度(℃): -55 ~150

描述:FQPF10N20C,TO-220F,DIP/MOS,N场,200V,9.5A,0.36Ω N-沟道增强型场效应晶体管
   These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.
   This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.

特点：
 * 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V
 * Low gate charge ( typical 20 nC)
 * Low Crss ( typical 40.5 pF)
 * Fast switching
 * 100% avalanche tested
 * Improved dv/dt capability

 

 

产品型号:FQPF32N20C 200V N-Channel MOSFET

封装:TO-220F

品牌：FAIRCHILD/仙童

源漏极间雪崩电压V(br)dss(V):200

夹断电压VGS(V):±30

漏极电流Id(A):28

源漏极导通电阻rDS(on)(Ω):0.082 @VGS = 10 V

开启电压VGS(TH)(V):4

功率PD(W):50

输入电容Ciss(PF):1700 typ.

通道极性:N沟道

低频跨导gFS(s)：20

单脉冲雪崩能量EAS(mJ):955

导通延迟时间Td(on)(ns):25 typ.

上升时间Tr(ns):270 typ.

关断延迟时间Td(off)(ns):245 typ.

下降时间Tf(ns):210 typ.

温度(℃): -55 ~150

描述:FQPF32N20C,TO-220F,DIP/MOS,N场,200V,28A,0.082Ω N-沟道增强型场效应晶体管
   These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.
   This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.

特点：
 * 28A, 200V, RDS(on) = 0.082Ω @VGS = 10 V
 * Low gate charge ( typical 82.5 nC)
 * Low Crss ( typical 185 pF)
 * Fast switching
 * 100% avalanche tested
 * Improved dv/dt capability

深圳市金城微零件有限公司                                  
地址：深圳市福田区华富路航都大厦13E
经营：各种三极管、场效应管、可控硅、稳压ＩＣ、开关电源IC、肖特基、IGBT等
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企业名：深圳市金城微零件有限公司

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