FAIRCHILD/*童
FQA38N30
*缘栅(MOSFET)
N沟道
增强型
SW-REG/开关电源
N-FET硅N沟道
10(V)
300(V)
60(pF)
2(dB)
38000(mA)
企业名:陈培忠
类型:经销商
电话: 0755-84746465
联系人:陈培忠
地址:广东深圳福田区现代国际大厦
∟ 整流二极管(5)∟ 快/超快/特快恢复二极管(18)
N-Channel MOSFET
300V, 38A, 0.085?
Features
•RDS(on) = 0.07? ( T*.) @ VGS = 10V, ID = 19A
•Low gate charge ( t*ical 60 nC)
•Low Crss ( t*ical 60 pF)
•Fast switching
•100% avalanche tested
•Improved dv/dt capability
•*D Improved capability
•RoHS Compliant
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide *ior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
友情链接: 深圳市元东发电子有限公司