FAIRCHILD/*童
FQPF9N50C
*缘栅(MOSFET)
N沟道
增强型
SW-REG/开关电源
N-FET硅N沟道
2(V)
500(V)
24(pF)
1(dB)
9000(mA)
企业名:陈培忠
类型:经销商
电话: 0755-84746465
联系人:陈培忠
地址:广东深圳福田区现代国际大厦
∟ 整流二极管(5)∟ 快/超快/特快恢复二极管(18)
FQPF9N50C
500V N-Channel MOSFET
Features
• 9A, 500V, RDS(on) = 0.8Ω @VGS = 10 V
• Low gate charge (t*ical 28 nC)
• Low Crss (t*ical 24pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode (t*ical 100ns)
Description
These N-Channel enhancement mode power field effect transistors
are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to minimize
on-state resistance, provide *ior switching performance,
and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficiency
switched mode power supplies, active power factor correction,
electronic lamp ballasts based on half bridge *ology.
友情链接: 深圳市元东发电子有限公司