产品型号:FQPF32N20C 200V N-Channel MOSFET

封装:TO-220F

品牌：FAIRCHILD/仙童

源漏极间雪崩电压V(br)dss(V):200

夹断电压VGS(V):±30

漏极电流Id(A):28

源漏极导通电阻rDS(on)(Ω):0.082 @VGS = 10 V

开启电压VGS(TH)(V):4

功率PD(W):50

输入电容Ciss(PF):1700 typ.

通道极性:N沟道

低频跨导gFS(s)：20

单脉冲雪崩能量EAS(mJ):955

导通延迟时间Td(on)(ns):25 typ.

上升时间Tr(ns):270 typ.

关断延迟时间Td(off)(ns):245 typ.

下降时间Tf(ns):210 typ.

温度(℃): -55 ~150

描述:FQPF32N20C,TO-220F,DIP/MOS,N场,200V,28A,0.082Ω N-沟道增强型场效应晶体管
   These N-Channel enhancement mode power field effect transistors are produced

using Fairchild’s proprietary,planar stripe, DMOS technology.
   This advanced technology has been especially tailored to minimize on-state

resistance, provide superior switching performance, and withstand high energy

pulse in the avalanche and commutation mode. These devices are well suited for

high efficiency switching DC/DC converters,switch mode power supplies, DC-AC

converters for uninterrupted power supplies and motor controls.

特点：
 * 28A, 200V, RDS(on) = 0.082Ω @VGS = 10 V
 * Low gate charge ( typical 82.5 nC)
 * Low Crss ( typical 185 pF)
 * Fast switching
 * 100% avalanche tested
 * Improved dv/dt capability

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