供应低压MOS SI2302 A2SHB

  • 型号/规格:

    SI2302 A2SHB

  • 品牌/商标:

    LTX

  • 封装形式:

    SOT-23

  • 环保类别:

    无铅环保型

  • 安装方式:

    贴片式

  • 包装方式:

    卷带编带包装

??????????????? ???? ?? ????? ??????? ?????????? ?????? Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 ?A 20 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 ?A 0.5 1.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ?8 V ?100 nA Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V 50 Zero Gate Voltage Drain Current IDSS VDS =16 V, VGS = 0 V, TJ = 55?C On-State Drain Currenta ID(on) VDS ? 5 V, VGS = 4.5 V 6 A On-State Drain Currenta ID(on) VDS ? 5 V, VGS = 2.5 V 4 A Drain-Source On-Resistancea rDS(on) VGS = 4.5 V, ID = 3.0 A 0.060 0.065 ? Drain-Source On-Resistancea rDS(on) VGS = 2.5 V, ID = 2.0 A 0.085 0.090 ? Forward Transconductancea gfs VDS = 5 V, ID = 3.0 A 10 S Diode Forward Voltage VSD IS = 1.0 A, VGS = 0 V 1.28 V Dynamic Total Gate Charge Qg V 10 V V 4 5 V I 3 6 A 5.4 10 C Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 3.6 A 0.65 nC Gate-Drain Charge Qgd 1.60 Input Capacitance Ciss V 10 V V 0 V f 1

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