IPB180P04P4L-02 原装 场效应管

OptiMOS® -P2 Power-Transistor

-40V, P-Ch, 2.4 mΩmax, Automotive MOSFET, D2PAK 7pin, OptiMOS™-P2

IPB180P04P4L-02 原装 场效应管 的技术参数：

产品种类	MOSFET
RoHS	是
安装风格	SMD/SMT
晶体管极性	P-Channel
通道数量	1 Channel
Vds-漏源极击穿电压	40 V
Id-连续漏极电流	180 A
Rds On-漏源导通电阻	3.9 mOhms
Vgs -栅极-源极电压	- 16 V, + 5 V
Vgs th-栅源极阈值电压	1.2 V
Qg-栅极电荷	220 nC
工作温度	- 55 C TO + 175 C
Pd-功率耗散	150 W
通道模式	Enhancement
资格	AEC-Q101
配置	Single
系列	OptiMOS-P2
晶体管类型	1 P-Channel
下降时间	119 ns
上升时间	28 ns
典型关闭延迟时间	146 ns
典型接通延迟时间	32 ns

IPB180P04P4L-02 原装 场效应管 的特征：

AEC qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Green package (RoHS compliant)

100% Avalanche tested

No charge pump required for high side drive.

Simple interface drive circuit

World's lowest RDSon at 40V

Highest current capability

Lowest switching and conduction power losses for highest thermal efficiency

Robust packages with superior quality and reliability

Standard packages TO-252, TO-263, TO-220, TO-262

High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors)

Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump 

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